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| 2SK3302 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3302 Switching Regulator and DC-DC Converter Applications * * * * Low drain-source ON resistance: RDS (ON) = 11.5 (typ.) High forward transfer admittance: |Yfs| = 0.4 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 500 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 30 0.5 1.5 1.3 14.3 0.5 0.13 150 -55~150 Unit V V V A W mJ A mJ C C Drain power dissipation Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA Weight: 1.9 g (typ.) 2-8MIB Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to ambient Symbol Rth (ch-a) Max 96.1 Unit C/W Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: VDD = 90 V, Tch = 25C, L = 100 mH, RG = 25 , IAR = 0.5 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature. This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2006-11-06 2SK3302 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr ton tf toff Qg Qgs Qgd VDD 400 V, VGS = 10 V, ID = 0.5 A - ID = 0.25 A VOUT RL = 1 k VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V IG = 10 A, VGS = 0 V VDS = 500 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 0.25 A VDS = 10 V, ID = 0.25 A Min 30 500 2.0 0.2 Typ. 10 0.4 75 7 24 11 Max 10 100 4.0 18 pF Unit A V A V V S 10 V VGS 0V 4.7 ns Turn-ON time Switching time Fall time 18 54 nC Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge VDD 250 V - Duty < 1%, tw = 10 s = 95 3.8 1.9 1.9 Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 0.5 A, VGS = 0 V IDR = 0.5 A, VGS = 0 V, dIDR/dt = 100 A/s Min Typ. 190 380 Max 0.5 1.5 -1.5 Unit A A V ns nC Marking K3302 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-06 2SK3302 ID - VDS 0.5 Common source Ta = 25C 0.4 Pulse test 8 10 1.0 5.5 6 5 0.8 10 ID - VDS 6 5.75 5.5 0.6 8 Common source Ta = 25C Pulse test Drain current ID (A) 0.3 Drain current ID (A) 4.75 5.25 5 4.75 0.2 4.5 4.25 0.4 0.1 VGS = 3.75 V 0.2 4 0 0 4.5 4.25 VGS = 4 V 10 20 30 40 50 0 0 2 4 6 8 10 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 1.0 Common source 0.8 VDS = 20 V Pulse test 25 0.6 100 0.4 Ta = -55C 0.2 20 VDS - VGS Common source VDS (V) Ta = 25C 16 Pulse test Drain current ID (A) Drain-source voltage 12 8 ID = 0.5 A 4 0.25 0.12 0 0 2 4 6 8 10 0 0 4 8 12 16 20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| - ID 1 30 RDS (ON) - ID Forward transfer admittance |Yfs| (S) Ta = -55C Drain-source ON resistance RDS (ON) () 0.5 100 0.3 25 Common source VDS = 20 V Pulse test 0.1 0.05 0.1 0.3 0.5 1 10 5 3 Common source Ta = 25C Pulse test 1 0.01 0.03 0.05 0.1 0.3 0.5 1 Drain current ID (A) Drain current ID (A) 3 2006-11-06 2SK3302 RDS (ON) - Ta 40 Common source VGS = 10 V 32 Pulse test ID = 0.1 A 24 1 Common source 0.5 Tc = 25C 0.3 Pulse test IDR - VDS Drain-source ON resistance RDS (ON) () Drain reverse current IDR (A) 0.5 0.25 0.1 0.05 0.03 10 3 1 0.6 VGS = 0, -1 V 0.8 1.0 1.2 16 8 0 -80 -40 0 40 80 120 160 0.01 0 0.2 0.4 Ambient temperature Ta (C) Drain-source voltage VDS (V) Capacitance - VDS 300 5 Vth - Ta Common source 100 (pF) Ciss Vth (V) 4 VDS = 10 V ID = 1 mA Pulse test 50 30 Capacitance C Gate threshold voltage 3 10 Common source 3 VGS = 0 V f = 1 MHz Ta = 25C 1 0.1 0.3 0.5 1 5 Coss 2 1 Crss 3 5 10 30 50 100 Drain-source voltage VDS (V) 0 -80 -40 0 40 80 120 160 Ambient temperature Ta (C) PD - Ta 1.6 500 Dynamic input/output characteristics Common source ID = 0.5 A Ta = 25C Pulse test 20 Drain power dissipation PD (W) (V) 400 VDS 1.2 VDD = 100 V VDS 16 Drain-source voltage 0.8 200 200 400 8 0.4 100 VGS 4 0 0 40 80 120 160 200 0 0 2 4 6 8 0 10 Ambient temperature Ta (C) Total gate charge Qg (nC) 4 2006-11-06 Gate-source voltage 300 12 VGS (V) 2SK3302 rth - tw 3 Normalized transient thermal impedance 1 0.5 0.3 Duty = 0.5 0.2 0.1 0.1 0.05 0.03 0.05 0.02 0.01 Single pulse PDM 0.01 0.005 0.003 t T Duty = t/T Rth (ch-a) = 96.1C/W 1m 10 m 100 m 1 10 100 rth (t)/Rth (ch-a) 0.001 100 Pulse width tw (s) Safe operating area 10 20 EAS - Tch Avalanche energy EAS (mJ) (V) ID max (pulsed) * 1 ID max (continuous) 1 ms * 100 s * 16 VDS 12 Drain-source voltage 0.1 DC operation Ta = 25C 8 0.01 * Single nonrepetitive pulse Ta = 25C Curves must be derated linearly with increase in temperature. 0.001 0.1 1 10 VDSS max 100 1000 4 0 25 50 75 100 125 150 Channel temperature Tch (C) Drain current ID (A) 15 V -15 V BVDSS IAR VDD VDS Test circuit RG = 25 VDD = 90 V, L = 100 mH Wave form E AS = B VDSS 1 L I2 2 B VDSS - VDD 5 2006-11-06 2SK3302 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-06 |
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